[16a-M_B104-1~10] 6.6 Probe Microscopy

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-M_B104-4] Temperature-controlled local CV profiling of nitrided SiO₂/SiC by time-resolved scanning nonlinear dielectric microscopy

〇Kohei Yamasue¹, Yasuo Cho² (1.RIEC, Tohoku Univ., 2.NICHe, Tohoku Univ.)

Keywords:

semiconductor,scanning nonlinear dielectric microscopy,SiC

We applied local capacitance-voltage (CV) profiling under temperature control using time-resolved scanning nonlinear dielectric microscopy (SNDM) to evaluate the effects of NO-POA treatment on SiO₂/SiC interface defects. Comparison with a thermally oxidized sample revealed that NO-POA contributes to interface defect reduction over a wide energy range. The effect is particularly pronounced for shallow-level defects, while some deep-level defects remain after the treatment.