[16a-M_B104-1~10] 6.6 Probe Microscopy

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_B104-6] Light-assisted local capacitance-voltage profiling of SiO₂/SiC using scanning nonlinear dielectric microscopy

〇(M1)Akihiro Isaka^1,2, Nobuhide Yokota³, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ., 3.Shizuoka Univ.)

Keywords:

scanning nonlinear dielectric microscopy,scanning probe microscope,semiconductor

Scanning nonlinear dielectric microscopy (SNDM) enables the nanoscale observation of majority carrier distributions and interfacial defect density in semiconductor materials.By integrating light irradiation capability into SNDM, interface defects with deep energy levels can be probed. In this study, we performed light-assisted local capacitance–voltage (CV) profiling of SiC using SNDM to evaluate interface defect levels in wide-bandgap semiconductors. We observed a light-induced shift in the local CV characteristics, which is attributable to optical excitation of deep states in the bandgap.