[16a-M_B104-1~10] 6.6 Probe Microscopy

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-M_B104-7] Investigation of sweep-time dependence in local MOS CV profiles obtained by time-resolved scanning nonlinear dielectric microscopy

〇Tomohiro Suzuki^1,2, Kohei Yamasue² (1.Tohoku Univ., 2.RIEC, Tohoku Univ.)

Keywords:

SNDM,scanning probe microscope,semiconductor

CV profiling is an evaluation method for the insulator-semiconductor interface in MOS structures. In this study, we achieved local CV profiling with voltage-sweep time ranging from 1 µs/cycle to 10 ms/cycle using time-resolved scanning nonlinear dielectric microscopy. In a SiO₂/SiC wafer, a sweep-time dependence was observed in the hysteresis of local CV profiles, which is thought to originate from the time constants of carrier trapping and releasing at interface defects. We report the visualized distribution of the shift, which indicates the magnitude of this hysteresis.