[16a-PA2-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-PA2-1] Connection of Back Illuminated Mg₂Si-pn Junction PD Array to si Interposer

〇Hiroki Yamaguchi¹, Hideto Takei¹, Yuki Iino¹, Hidehiro Sekiguchi¹, Yuki Okamoto², Ryouhei Takei², Hideki Takagi², Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ., 2.AIST)

Keywords:

Magnesium silicide,Infrared sensor,Interposer

We have focused on Mg₂Si, an infrared-receiving material in the SWIR region with low resource risk, and have been advancing development toward the practical application of SWIR infrared image sensors using Mg₂Si. We report on the results of connecting a back-illuminated Mg₂Si-PD2DA with 8×8 pixels (50 µm square per pixel) to a Si interposer, which was prototyped for image acquisition using a pn-junction photodiode two-dimensional array (PD2DA) structure.