[16a-PA2-1~6] 13.2 Exploratory Materials, Physical Properties, Devices

[16a-PA2-3] Electrical Characterization of n⁺p Junction Mg₂Si Diodes Formed by Impurity Diffusion

〇Shogo Hasegawa¹, Hibiki Katsumata¹, Ryosuke Furuta¹, Kosuke Shimano¹, Zenji Fujihisa¹, Shunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

magnesium silicide,carrier lifetime,pn junction

Research was conducted on Mg₂Si, which is expected to be applied to short-wavelength infrared sensors, aiming to improve light reception sensitivity. Since Mg₂Si exhibits higher electron mobility than hole mobility, an n⁺p structure using a p-type substrate is expected to increase the diffusion length. In this study, an n⁺p junction diode was formed by thermally diffusing the n-type impurity Al into the p-type substrate.
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