[16a-PA3-1~3] 13.3 Insulator technology

[16a-PA3-1] Breaking energy of Si-H and N-H bonds in SiN_x films

〇Tomoki Oku¹, Masahiro Totsuka¹, Hajime Sasaki¹ (1.Mitsubishi Electric)

Keywords:

hydrogen migration,molecular orbital calculation,dangling bond

The energy barriers for breaking Si-H and N-H bonds required for hydrogen migration in SiN_x films with dangling bonds were analyzed using molecular orbital calculations.