Session Details
[16a-PA3-1~3]13.3 Insulator technology
Mon. Mar 16, 2026 9:30 AM - 11:00 AM JST
Mon. Mar 16, 2026 12:30 AM - 2:00 AM UTC
Mon. Mar 16, 2026 12:30 AM - 2:00 AM UTC
PA3 (Arena (1F))
[16a-PA3-1]Breaking energy of Si-H and N-H bonds in SiNx films
〇Tomoki Oku1, Masahiro Totsuka1, Hajime Sasaki1 (1.Mitsubishi Electric)
[16a-PA3-2]Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures
〇(B)Shota Miyazaki1, Takuma Nanjo1, Masayuki Furuhashi2, Tatsuro Watahiki2, Toshiharu Kubo1, Takashi Egawa1 (1.NITech, 2.Mitsubishi Electric Cor.)
[16a-PA3-3]Temperature Dependences of Permittivity and Remanent Polarization of Metal/HfZr-oxide/Metal Capacitor Fabricated on Si Substrate
Aoi Teshima1, Katsunori Makihara2, Yusuke Ichino1, Yoshiyuki Seike1, Tatsuo Mori1, 〇Noriyuki Taoka1 (1.Aichi Inst. of Tech., 2.Nagoya Univ.)