Presentation Information
[16a-PA3-2]Controlling two-dimensional electron gas density through surface states in ultra-thin-barrier AlGaN/GaN heterostructures
〇(B)Shota Miyazaki1, Takuma Nanjo1, Masayuki Furuhashi2, Tatsuro Watahiki2, Toshiharu Kubo1, Takashi Egawa1 (1.NITech, 2.Mitsubishi Electric Cor.)
Keywords:
AlGaN,GaN
In AlGaN/GaN HEMTs, the two-dimensional electron gas (2DEG) density is determined by epitaxial growth conditions, making post-growth control through device processing difficult. In this study, we focus on an extrinsically electron induced by dielectric (EID) structure employing an ultrathin AlGaN layer, and investigate the feasibility of controlling the 2DEG density via surface pinning energy modulation by device processing, mainly through band structure calculations.