[16a-PA3-1~3] 13.3 Insulator technology

[16a-PA3-3] Temperature Dependences of Permittivity and Remanent Polarization of Metal/HfZr-oxide/Metal Capacitor Fabricated on Si Substrate

Aoi Teshima¹, Katsunori Makihara², Yusuke Ichino¹, Yoshiyuki Seike¹, Tatsuo Mori¹, 〇Noriyuki Taoka¹ (1.Aichi Inst. of Tech., 2.Nagoya Univ.)

Keywords:

Ferroelectric,Permittivity,Remanent Polarization