[16a-S2_203-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-S2_203-4] [The 17th Silicon Technology Division Young Researcher Award] Temporary Direct Bonding by Low-Temperature Deposited SiO₂ film

〇Koki Onishi¹, Hayato Kitagawa¹, Shunsuke Teranishi², Akira Uedono³, Fumihiro Inoue¹ (1.Yokohama National Univ., 2.DISCO corp., 3.Tsukuba Univ.)

Keywords:

semiconductor,direct bonding,chiplet

This presentation focuses on the temporary bonding process in die-to-wafer hybrid bonding, introducing a temporary bonding technology using direct bonding with low-temperature (150^oC) deposited SiO₂ films (LT-SiO₂). Temporary direct bonding with LT-SiO₂ effectively suppresses the shift of temporarily placed dies and ensures the flatness of the bonding surface. Furthermore, because it can be easily debonded through annealing, it contributes to cost reduction. In addition to providing an overview of the temporary bonding process using LT-SiO₂, this presentation discusses the debonding mechanism in detail.