[16a-S2_203-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-S2_203-5] Analysis of the Correlation Between Dynamics and Edge-Void Formation in Wafer Bonding

〇Hyuga Ishii¹, Ryota Ogata¹, Taisuke Yamamoto¹, Ryosuke Sato¹, Hayato Kitagawa¹, Fumihiro Inoue¹ (1.Yokohama Nat Univ.)

Keywords:

Wafer Bonding,3D Integration

Wafer bonding is a key technology for 3D integration in advanced AI chips. However, edge voids localized near the wafer periphery degrade yield and reliability and can act as origins of chipping and cracking during wafer thinning. In this presentation, we measure bond-front propagation and examine how variations in bonding dynamics affect the location and morphology of edge voids. We then compare the experimental observations with bonding simulations to discuss the underlying formation mechanism.