[16a-S2_203-1~9] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-S2_203-6] Process Optimization for High-Thermal Conductivity, Low-Temperature-Grown AlN for 3DIC/TSV by FM-CVD

〇(P)Yuhei Otaka¹, Lu Yin-Chi¹, Hatakeyama Daiki¹, Jun Yamaguchi¹, Tamaoki Naoki¹, Noboru Sato¹, Atsuhiro Tsukune¹, Yukihiro Shimogaki¹ (1.Univ. Tokyo)

Keywords:

3DICs,AlN,FM-CVD

We improved a flow-modulated chemical vapor deposition method, in which NH₃ is supplied continuously and TMA intermittently, to form AlN thin films inside TSVs for three-dimensional integrated circuits at low temperatures around 673 K with high deposition rate and excellent step coverage. By thoroughly investigating the dependence on various process parameters, we propose a low-temperature process capable of achieving high thermal conductivity. As a result, AlN films with a thermal conductivity of up to 10.9 W/mK were obtained.