[16a-W2_401-1~9] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W2_401-2] Fabrication of Al-rich AlGaN HEMTs using a heavily Si-doped AlN barrier

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

Keywords:

AlN,HEMT,Sputtering