[16a-W2_401-1~9] 15.4 III-V-group nitride crystals | The 73rd JSAP Spring Meeting 2026

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[16a-W2_401-1~9]15.4 III-V-group nitride crystals

Mon. Mar 16, 2026 9:00 AM - 11:30 AM JST
Mon. Mar 16, 2026 12:00 AM - 2:30 AM UTC

W2_401 (West Bldg. 2)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)English Presentation

[16a-W2_401-1][The 47th Young Scientist Award Speech] High-current, high-voltage AlN Schottky Barrier Diodes

〇Cristyan Quinones¹, Dolar Khachariya², Pramod Reddy², Seiji Mita², Jack Almeter¹, Pegah Bagheri¹, Shashwat Rathkanthiwar¹, Ronny Kirste², Spyridon Pavlidis¹, Erhard Kohn¹, Ramon Collazo¹, Zlatko Sitar^1,2 (1.North Carolina State University, 2.Adroit Materials)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W2_401-2]Fabrication of Al-rich AlGaN HEMTs using a heavily Si-doped AlN barrier

〇Takao Kozaka¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W2_401-3]Relationship between AlN Composition Gradient in the GaN Channel and Leakage Current in N-Polar GaN HEMT Structures

〇(DC)Aina Hiyama Zazuli¹, Ryosuke Ninoki¹, Fumiya Yamanaka¹, Taisei Kimoto¹, Haruki Danbata¹, Nobuteru Hirata¹, Amane Hayashiuchi¹, Yuuya Kitamura¹, Kei Sunai¹, Rinne Abe¹, Haruka Tokumoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)English Presentation

[16a-W2_401-4]Dependence of 2-dimensional electron gas mobility on temperature and carrier concentration: Evidence of carrier-carrier scattering

〇Markus Pristovsek¹, Yoann Robin¹, Itsuki Furuhashi¹ (1.IMASS, Nagoya Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-W2_401-5]Analysis of Surface Defects on AlN Templates Affecting Leakage Current in n-AlGaN

〇Hiroki Yasunaga^1,2, Ryota Akaike^2,3, Koki Mizutani³, Takao Nakamura^2,3, Hideto Miyake^2,3 (1.Mie Univ. ORIP, 2.Mie Univ. IC-SDF, 3.Mie Univ. Grad. Sch. of Eng.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-W2_401-6]Growth of AlGaN using MOVPE-AlN Template on Sputtered AlN

〇(M2)Yuto Matsubara¹, Koki Fujii¹, Yusuke Takayanagi¹, Yukiya Hayashi¹, Soki Shimizu¹, Yuki Kuwahara¹, Kota Matsuo¹, Yuusuke Takashima^1,2, Yoshiki Naoi^1,2, Ibuki Taniuchi⁴, Shohei Nakamura⁴, Atsushi Maeoka⁴, Atsushi Osawa⁴, Shigeru Takatsuji⁴, Takahiro Kimura⁴, Kentaro Nagamatsu^1,2,3 (1.Faculty of Science and Engineering, Tokushima Univ., 2.pLED, Tokushima Univ., 3.IPHF, Tokushima Univ., 4.SCREEN Holdings Co., Ltd.)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-W2_401-7]Comparison of Electrical Properties of Electrochemically Energized n-GaN and AlGaN/GaN Heterostructures

〇Ren Morita¹, Riku Ando¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W2_401-8]Planarization of {11-22} AlN using H2 pulsed etching in metal-organic vapor phase epitaxy

〇(M1)Takahiro Sumino¹, Satoshi Kurai¹, Narihito Okada¹, Youichi Yamda¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-W2_401-9]In situ sputtered metal contacts on pulsed-sputtered n-type AlGaN

〇Aiko Naito¹, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, Utokyo)

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