[16a-W2_401-1~9] 15.4 III-V-group nitride crystals

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W2_401-3] Relationship between AlN Composition Gradient in the GaN Channel and Leakage Current in N-Polar GaN HEMT Structures

〇(DC)Aina Hiyama Zazuli¹, Ryosuke Ninoki¹, Fumiya Yamanaka¹, Taisei Kimoto¹, Haruki Danbata¹, Nobuteru Hirata¹, Amane Hayashiuchi¹, Yuuya Kitamura¹, Kei Sunai¹, Rinne Abe¹, Haruka Tokumoto¹, Satoshi Kurai¹, Narihito Okada¹, Yoichi Yamada¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

Keywords:

MOVPE,N-polar GaN,HEMT