[16a-W2_401-1~9] 15.4 III-V-group nitride crystals

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-W2_401-7] Comparison of Electrical Properties of Electrochemically Energized n-GaN and AlGaN/GaN Heterostructures

〇Ren Morita¹, Riku Ando¹, Hiroshi Fujioka², Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Inst. of Industrial Science, Univ. of Tokyo)

Keywords:

AlGaN/GaN hetero structure,Electrochemical,Nitride semiconductor