[16a-W2_401-1~9] 15.4 III-V-group nitride crystals

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W2_401-8] Planarization of {11-22} AlN using H2 pulsed etching in metal-organic vapor phase epitaxy

〇(M1)Takahiro Sumino¹, Satoshi Kurai¹, Narihito Okada¹, Youichi Yamda¹ (1.Grad. School of Sci. & Tech. for Innovation, Yamaguchi Univ.)

Keywords:

AlN,MOCVD,{11-22} growth

{11-22} GaN/AlN HEMTs using AlN substrates can achieve normally-off operation; however, surface flatness deteriorates during {11-22} growth. In this study, {11-22} AlN was grown by MOVPE, and the effects of hydrogen pulse etching and V/III ratio variation on surface flatness were investigated. As a result, the highest flatness was achieved at a V/III ratio of 200, with an RMS value of 1.79 nm, demonstrating the effectiveness of this method.