[16a-W8E_101-1~9] 13.7 Compound and power devices, process technology and characterization

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W8E_101-1] Ga-polar GaN/diamond junctions for Improved Heat Spreading

〇Hikaru Iwamoto¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ.)

Keywords:

nitride semiconductor,diamond,surface-activated bonding

We previously demonstrated the excellent heat dissipation properties of a nitride semiconductor/Diamond structure fabricated using the surface-activated bonding method. In this study, we fabricated a GaN/Diamond structure by bonding a thin GaN film onto a Diamond substrate to enable crystal growth after bonding, which is assumed to play an important role in expanding the structural flexibility and of nitride layer and further improving heat dissipation.