[16a-W8E_101-1~9] 13.7 Compound and power devices, process technology and characterization | The 73rd JSAP Spring Meeting 2026

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Oral presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[16a-W8E_101-1~9]13.7 Compound and power devices, process technology and characterization

Mon. Mar 16, 2026 9:30 AM - 12:00 PM JST
Mon. Mar 16, 2026 12:30 AM - 3:00 AM UTC

W8E_101 (West Bldg. 8)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W8E_101-1]Ga-polar GaN/diamond junctions for Improved Heat Spreading

〇Hikaru Iwamoto¹, Naoteru Shigekawa¹ (1.Osaka Metropolitan Univ.)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-W8E_101-2]Channeled implantation of Mg ions into GaN on sapphire substrate.

〇Atsushi Suyama^1,2, Hideaki Minagawa², Masahiko Aoki², Kazuhiro Yokota², Jun Suda¹ (1.Nagoya Univ., 2.Ion Technology Center.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W8E_101-3]Evaluation of traps in p-GaN layers with low-concentration Mg ion implantation and ultra-high-pressure annealing

〇Honoka Itakura¹, Masahiro Horita^1,2, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-W8E_101-4]Density functional calculations of vacancy-mediated diffusion mechanism of Mg in GaN

〇Kaori Seino¹, Kenji Shiraishi^2,3, Atsushi Oshiyama^2,3 (1.Kyushu Inst. Technol., 2.Tohoku Univ., 3.Nagoya Univ.)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-W8E_101-5]Effects of 850℃ pre-annealing prior to activation RTA of Mg-ion-implanted GaN on properties of MOS structures formed afterwards

〇Hinata Karasawa¹, Masanobu Takahashi¹, Masamichi Akazawa¹, Shota Kaneki², Masafumi Yokoyama², Hajime Fujikura² (1.RCIQE, Hokkaido Univ., 2.Sumitomo chemical)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W8E_101-6]TCAD analysis of current–voltage characteristics for GaN vertical JBS diodes fabricated by Mg and N ion implantation and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Tsutomu Uesugi², Masahiro Horita^1,2, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-W8E_101-7]Origin of Near-interface Donor-type Defects in p-GaN MOS Structures

〇Masanobu Takahashi¹, Takahiro Shimazaki¹, Taketomo Sato¹, Masamichi Akazawa¹ (1.RCIQE, Hokkaido Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[16a-W8E_101-8]A Two-Step Plateau Emerging with Increasing Temperature in the Capacitance–Voltage Characteristics of AlSiO/p-GaN MOS Capacitors

〇Fumiyuki Sei¹, Kenji Ito², Masahiro Horita^1,2, Tetsu Kachi², Jun Suda^1,2 (1.Department of Electronics, Nagoya Univ., 2.Nagoya Univ. IMaSS)

11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[16a-W8E_101-9]Split-off band field emission: the dominant current transport in metal/p⁺-GaN junction

〇Takuya Maeda¹, Akihira Munakata¹, Masaki Kobayashi¹, Ryosho Nakane¹, Karolina Peret², Mikolaj Chlipala², Henryk Turski² (1.Univ. of Tokyo, EEIS, 2.Institute of High Pressure Physics of the Polish Academy of Science (Unipress))

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