[16a-W8E_101-1~9] 13.7 Compound and power devices, process technology and characterization

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-W8E_101-5] Effects of 850℃ pre-annealing prior to activation RTA of Mg-ion-implanted GaN on properties of MOS structures formed afterwards

〇Hinata Karasawa¹, Masanobu Takahashi¹, Masamichi Akazawa¹, Shota Kaneki², Masafumi Yokoyama², Hajime Fujikura² (1.RCIQE, Hokkaido Univ., 2.Sumitomo chemical)

Keywords:

GaN,defects,interface states

Mg ion implantation is a promising technique for p-type GaN formation; however, methods for controlling implantation-induced defects have yet to be fully established. Achieving high activation ratios requires ultra-high pressure or extended processing times, even when high-temperature annealing is employed. In this study, to identify effective defect control strategies, we investigated the impact of a pre-annealing step at 850°C prior to high-temperature activation rapid thermal annealing (RTA).