[16a-W8E_101-1~9] 13.7 Compound and power devices, process technology and characterization

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W8E_101-6] TCAD analysis of current–voltage characteristics for GaN vertical JBS diodes fabricated by Mg and N ion implantation and ultra-high-pressure annealing

〇Kazuki Kitagawa¹, Tsutomu Uesugi², Masahiro Horita^1,2, Tetsu Kachi², Jun Suda^1,2 (1.Nagoya Univ., 2.Nagoya Univ. IMaSS)

Keywords:

Gallium Nitride,vertical JBS diodes,Mg ion implantation