Presentation Information
[16a-W8E_101-9]Split-off band field emission: the dominant current transport in metal/p+-GaN junction
〇Takuya Maeda1, Akihira Munakata1, Masaki Kobayashi1, Ryosho Nakane1, Karolina Peret2, Mikolaj Chlipala2, Henryk Turski2 (1.Univ. of Tokyo, EEIS, 2.Institute of High Pressure Physics of the Polish Academy of Science (Unipress))
Keywords:
Gallium Nitride (GaN),Field Emission,Ohmic contact
We fabricated p-GaN Schottky barrier diodes using InGaN tunnel junctions grown by MBE on n-GaN substrates, and investigated their current transport mechanisms. In samples with high Mg concentration, a degradation in rectifying properties and a decrease in the apparent barrier height were observed. Calculations using precise band parameters obtained from VUV-ARPES revealed that because the effective mass of the CH (split-off) band is extremely small (0.17m0), the field emission of holes originating from the CH band - which accounts for only about 3% of the total hole population - dominates the current transport in metal/heavily-doped p-GaN junctions.