[16a-W8E_307-1~10] 15.7 Crystal characterization, impurities and crystal defects

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-W8E_307-2] Observation of dislocation behavior at the seeding interface in CZ-Si crystal growth

〇Shoma Tsukada¹, Hiroki Tsukada¹, Hiroyuki Saito², Hisashi Matsumura^1,2, Takeshi Hoshikawa¹, Toshinori Taishi¹ (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)

Keywords:

silicon,dislocation