The 73rd JSAP Spring Meeting 2026
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Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[16a-W8E_307-1~10]15.7 Crystal characterization, impurities and crystal defects

Mon. Mar 16, 2026 9:00 AM - 11:45 AM JST
Mon. Mar 16, 2026 12:00 AM - 2:45 AM UTC
W8E_307 (West Bldg. 8)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-W8E_307-1]Gettering Design of Si wafers for Chiplet Era

〇Kazunari Kurita1, Hiroki Kondoh1 (1.Kyushu University)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-W8E_307-2]Observation of dislocation behavior at the seeding interface in CZ-Si crystal growth

〇Shoma Tsukada1, Hiroki Tsukada1, Hiroyuki Saito2, Hisashi Matsumura1,2, Takeshi Hoshikawa1, Toshinori Taishi1 (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-W8E_307-3]Numerical analysis on dislocation behavior during the necking process in
<110>-oriented CZ-Si crystal growth.

〇Hiroki Tsukada1, Shoma Tsukada1, Takeshi Hoshikawa1, Hiroyuki Saito2, Hisashi Matsumura1,2, Toshinori Taishi1 (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-W8E_307-4]Numerical study of heat and mass transfer in Cusp-shaped MCZ-Si growth

〇Koichi Kakimoto1, Satoshi Nakano2 (1.IMR, Tohoku Univ., 2.RIAM, Kyushu Univ.)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-W8E_307-5]The effect of growth direction on stress and dislocation density distributions in a Ga2O3 crystals grown by VB method

〇Koichi Kakimoto1, Taketoshi Tomida2, Vladimir Kochurikhin2, Masanori Kitahara2, Kei Kamada1, Rikito Murakami1, Satoshi Nakano3, Yao Yongzhao4, Kazuaki Akaiwa5, Akira Yoshikawa1,2 (1.IMR, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ., 5.Tottori Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-W8E_307-6]Development of large area X-ray rocking curve mapping technique

〇Kotaro Ishiji1, Shigeru Ishida2, Shin-ichiro Kokubu2, Takashi Fujii3, Tsuyoshi Kumagai3, Tsuguo Fukuda3, Keisuke Seo4, Shunta Harada4 (1.SAGA-LS, 2.SES, 3.Fukuda Cryst. Lab., 4.Nagoya Univ.)
10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-W8E_307-7]Quantitative Imaging of Residual Strain in Commercial Off-Axis SiC Wafers (2)

〇Naoto Tsuji1, Ryoya Watanabe1, Masahiro Iwasaki1, Masayuki Fukuzawa1 (1.Kyoto Institute of Technology)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W8E_307-8]Quality of silicon substrate and point defects: Renaissance (15) Effect of internal thermal stress on point defects (2)

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-W8E_307-9]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (28) Behavior of nitrogen at high temperature

〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-W8E_307-10]Measurement of carbon concentration in silicon crystal/ Renaissance (32) It is impossible to measure by photoluminescence

〇Naohisa Inoue1, Shuichi Okuda1, Shuichi Kawamata1 (1.Osaka Metropolitan Univ. Radiation Research Center)
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