[16a-W8E_307-1~10] 15.7 Crystal characterization, impurities and crystal defects

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-W8E_307-3] Numerical analysis on dislocation behavior during the necking process in
<110>-oriented CZ-Si crystal growth.

〇Hiroki Tsukada¹, Shoma Tsukada¹, Takeshi Hoshikawa¹, Hiroyuki Saito², Hisashi Matsumura^1,2, Toshinori Taishi¹ (1.Shinshu Univ., 2.GlobalWafers Japan Co., Ltd.)

Keywords:

Silicon,Dislocation,Numerical Analysis