[16a-W8E_307-1~10] 15.7 Crystal characterization, impurities and crystal defects

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-W8E_307-4] Numerical study of heat and mass transfer in Cusp-shaped MCZ-Si growth

〇Koichi Kakimoto¹, Satoshi Nakano² (1.IMR, Tohoku Univ., 2.RIAM, Kyushu Univ.)

Keywords:

semiconductor,Si,simulation

This paper reports the calculated results of temperature , velocity and oxygen concetration using 2D-3D coupling method. The results show that oxygen concetration at the interface between a crystal and the melt increases as a function of crucible rotation rate.