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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-W8E_307-5]The effect of growth direction on stress and dislocation density distributions in a Ga₂O₃crystals grown by VB method

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Masanori Kitahara², Kei Kamada¹, Rikito Murakami¹, Satoshi Nakano³, Yao Yongzhao⁴, Kazuaki Akaiwa⁵, Akira Yoshikawa^1,2 (1.IMR, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.Mie Univ., 5.Tottori Univ.)

Keywords:

semiconductor,Ga2O3,simulation

This paper reports the calculated results of temperature and dislocation density in VB-grown Ga2O3 using timedependent 3D method. The results show that dislocation density is small in a c-axis grown crystal.

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[16a-W8E_307-5]The effect of growth direction on stress and dislocation density distributions in a Ga2O3 crystals grown by VB method

Keywords:

[16a-W8E_307-5]The effect of growth direction on stress and dislocation density distributions in a Ga₂O₃crystals grown by VB method