[16a-W8E_307-1~10] 15.7 Crystal characterization, impurities and crystal defects

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-W8E_307-7] Quantitative Imaging of Residual Strain in Commercial Off-Axis SiC Wafers (2)

〇Naoto Tsuji¹, Ryoya Watanabe¹, Masahiro Iwasaki¹, Masayuki Fukuzawa¹ (1.Kyoto Institute of Technology)

Keywords:

SiC,residual strain,photoelastic technique

With the expansion of commercial large-diameter SiC wafers, it has become important to characterize the residual strains with photoelastic technique, but the natural birefringence in the off-axis wafer was still an obstacle. We developed an imaging polariscope (xIP) that can suppress natural birefringence by combining a collimated probing light and a wafer-tilting mechanism. In this study,we attempted quantitative imaging of residual strain in various commercial SiC wefars by using xIP, and examined their distribution patterns and direction of principal strains.