Presentation Information
[16a-W8E_307-9]High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal: Renaissance (28) Behavior of nitrogen at high temperature
〇Naohisa Inoue1, Shuichi Kawamata1, Shuichi Okuda1 (1.Osaka Metropolitan Univ. Radiation Research center)
Keywords:
silicon crystal,nitrogen,infrared absorption
We found the IR absorption of VNN, VVNN in Si, and Ni and VVNN in as-grown Si. There were following discussions on N-V interaction: Abe showed FZ samples turned to highly resistive by annealing at 1000℃ in N-atmosphere. N2-V2 interaction was suggested. Suezawa removed STD (N-O square) by annealing at 1100℃. Voronkov suggested N diffuses by dissociative mechanism to monomer. STD is dominant in low [N] Si. Kageshima and Voronkov suggested N2-V complex in FZ-Si reduces the void. Tanahashi showed N2 out-diffuses at 1100℃. We observed the following phenomena: Ni forms N-Si-O chain (NO) in CZ-Si and VNs in FZ-Si below 800℃, but returns to Ni at 800℃ and above. VVNN does not change by annealing below 800℃, but breaks into NN at 800℃ and above. N2-V interaction is suspicious in FZ-Si. NN is stable above 800℃. Dissociative diffusion is questionable. NO is included in as-grown CZ-Si. O attachment and detachment are similar to those of NN below 800℃. Attached Oi is more stable than that of NN.