[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-W9_324-10] Effect of Anisotropic Nitrogen Diffusion on β-Ga₂O₃ Schottky Barrier Diodes

〇Ryuji Sakai¹, Tetsuro Hayashida¹, Masaki Taya¹, Tatsuro Watahiki¹, Yuki Koishikawa², Daiki Wakimoto², Hironobu Miyamoto² (1.Mitsubishi Electric, 2.NCT)

Keywords:

Ga2O3,SBD