The 73rd JSAP Spring Meeting 2026
Advanced Search

Session Details

Oral presentation21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" : 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[16a-W9_324-1~12]21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Mon. Mar 16, 2026 9:00 AM - 12:15 PM JST
Mon. Mar 16, 2026 12:00 AM - 3:15 AM UTC
W9_324 (West Bldg. 9)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-W9_324-1]Three-dimensional visualization of lattice defects in β-Ga2O3 crystals using synchrotron X-ray topo-tomography

〇Yongzhao Yao1,2, Daiki Katsube2, Hirotaka Yamaguchi2, Yoshihiro Sugawara2, Kohei Sasaki3, Akito Kuramata3, Yukari Ishikawa2 (1.Mie Univ., 2.JFCC, 3.Novel Crystal Technology)
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-W9_324-2]Bandgap Renormalization in Si-doped β-Ga2O3 Films

〇Takeyoshi Onuma1, Kai Yamamoto1, Kyosuke Tanaka1, Yoshiki Iba2, Junya Yoshinaga2,3, Kakeru Kubota2, Yuma Terauchi2, Tomohiro Yamaguchi1, Masataka Higashiwaki4,5, Yuzaburo Ban6, Yoshinao Kumagai2, Tohru Honda1 (1.Kogakuin Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORP., 4.Osaka Metropolitan Univ., 5.NICT, 6.TAIYO NIPPON SANSO ATI CORP.)
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-W9_324-3]Structural and Electrical Characterization of n-Ga2O3 (100), (010), and (001) Substrates Doped with Nitrogen by Reactive Ion Etching

Akimasa Mineyama1, 〇Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-W9_324-4]Thermal Diffusion of Nitrogen Atoms in Nitrogen-Doped Ga2O3 Thin Films Grown by Molecular Beam Epitaxy (2)

Jin Inajima1, Akimasa Mineyama1, Satoko Honda1, 〇Masataka Higashiwaki1,2 (1.Osaka Metropolitan Univ., 2.NICT)
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-W9_324-5]Analysis of slip planes in β-Ga2O3 based on chemical bonding

〇Hirotaka Yamaguchi1, Yongzhao Yao1,2, Daiki Katsube1, Yukari Ishikawa1 (1.JFCC, 2.Mie Univ.)
10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[16a-W9_324-6]Application of Metal Nitrides as Schottky Electrode Materials for β-Ga2O3

〇Yuta Nishizuru1, Yuki Uto1, Daiki Nakamura1, Yasuo Ohno2, Shinkai Satoko1 (1.Kyushu Inst. Tech., 2.Laser Systems Inc.)
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[16a-W9_324-7]Electrical characterization and current transport of NiOx/β-Ga2O3 heterojunction diodes

〇AKihira Munakata1, Hironobu Miyamoto2, Kohei Sasaki2, Takuya Maeda1 (1.Univ. of Tokyo, 2.Novel Crystal Technology, Inc.)
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W9_324-8]Epitaxial Growth of NiO on β-Ga2O3 Substrates by Mist CVD Method

〇Masaki Yono1, Rikuto Ishitani1, Masao Miyake1, Takumi Ikenoue1, Toshiya Doi1 (1.Kyoto Univ.)
11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-W9_324-9]Effect of solvent on the growth mechanism of NiO thin films deposited by Electrostatic Spray Deposition

〇Keisuke Shibata1, Kanata Tanaka1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-W9_324-10]Effect of Anisotropic Nitrogen Diffusion on β-Ga2O3 Schottky Barrier Diodes

〇Ryuji Sakai1, Tetsuro Hayashida1, Masaki Taya1, Tatsuro Watahiki1, Yuki Koishikawa2, Daiki Wakimoto2, Hironobu Miyamoto2 (1.Mitsubishi Electric, 2.NCT)
11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)

[16a-W9_324-11]Identification of Killer Defects in (011) HVPE-Grown b-Ga2O3 Schottky Barrier Diodes

〇Masanori Eguchi1, Makoto Sato2, Syotaro Nakaniwa2, Niloy Chandra Saha2, Chia-Hung Lin3, Kohei Sasaki3, Makoto Kasu2 (1.Saga Univ. Synchro., 2.Saga Univ., 3.Novel Crystal Technology)
12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[16a-W9_324-12]Investigation of Nitrogen-implanted CBL for Low Leakage Current in β-Ga2O3 Devices

〇Kohei Ebihara1, Tetsuro Hayashida1, Munetaka Noguchi1, Ryuji Sakai1, Rina Tanaka1, Masaki Taya1, Tatsuro Watahiki1 (1.Mitsubishi Electric Co.)
Back to Category List