[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[16a-W9_324-12] Investigation of Nitrogen-implanted CBL for Low Leakage Current in β-Ga2O3 Devices

〇Kohei Ebihara¹, Tetsuro Hayashida¹, Munetaka Noguchi¹, Ryuji Sakai¹, Rina Tanaka¹, Masaki Taya¹, Tatsuro Watahiki¹ (1.Mitsubishi Electric Co.)

Keywords:

Gallium Oxide,Ga2O3,CBL

Due to the significant challenge of p-type doping in β-Ga₂O₃ devices, a vertical MOSFET with a Current Blocking Layer (CBL) formed by ion implantation has been proposed as an alternative to the p-type layer. However, the leakage current of β-Ga₂O₃ devices using a CBL is larger compared to conventional power devices. In this study, we fabricated CBL-TEGs (Test Element Groups) with varied nitrogen ion implantation doses and evaluated the reverse bias characteristics. Additionally, light emission analysis was performed to identify the leakage current paths.