[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[16a-W9_324-2] Bandgap Renormalization in Si-doped β-Ga₂O₃ Films

〇Takeyoshi Onuma¹, Kai Yamamoto¹, Kyosuke Tanaka¹, Yoshiki Iba², Junya Yoshinaga^2,3, Kakeru Kubota², Yuma Terauchi², Tomohiro Yamaguchi¹, Masataka Higashiwaki^4,5, Yuzaburo Ban⁶, Yoshinao Kumagai², Tohru Honda¹ (1.Kogakuin Univ., 2.Tokyo Univ. of Agric. and Tech., 3.TAIYO NIPPON SANSO CORP., 4.Osaka Metropolitan Univ., 5.NICT, 6.TAIYO NIPPON SANSO ATI CORP.)

Keywords:

Gallium Oxide,photoluminescence excitation,bandgap renormalization

Optical spectra were measured for Si-doped films grown on semi-insulatingβ-Ga₂O₃ (010) substrates by low-pressure hot-wall MOVPE method. Polarized PL excitation spectra were measured by monitoring PL at 3.35 eV (370 nm). The PL excitation spectra exhibited a peak related to the exciton transition at Γpoint. Carrier density dependency of the peak energy indicated bandgap renormalization, which is induced by hybridization with the Si impurity orbitals.