[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-W9_324-3] Structural and Electrical Characterization of n-Ga₂O₃ (100), (010), and (001) Substrates Doped with Nitrogen by Reactive Ion Etching

Akimasa Mineyama¹, 〇Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

gallium oxide,reactive ion etching,nitrogen doping

In this study, nitrogen (N) doping was performed into n-Ga₂O₃ (100), (010), and (001) substrates using reactive ion etching. Secondary ion mass spectrometry revealed that high-density N doping was achieved in the near-surface region of the samples, and that N atoms were introduced deeper in the (010) sample than in the (100) and (001) ones. Furthermore, thermal diffusion of N atoms was confirmed by high-temperature annealing, which was most pronounced in the (010) sample.