[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-W9_324-4] Thermal Diffusion of Nitrogen Atoms in Nitrogen-Doped Ga₂O₃ Thin Films Grown by Molecular Beam Epitaxy (2)

Jin Inajima¹, Akimasa Mineyama¹, Satoko Honda¹, 〇Masataka Higashiwaki^1,2 (1.Osaka Metropolitan Univ., 2.NICT)

Keywords:

gallium oxide,nitrogen,thermal diffusion

We grew N-doped Ga₂O₃ (N = 4 × 10¹⁹, 4 × 10²⁰ cm^-3) and undoped Ga₂O₃ thin films sequentially on n-Ga₂O₃ (010) substrates by MBE. We then annealed the substrates at 900℃–1100℃ and confirmed the thermal diffusion of N atoms into the substrate and the undoped thin film. The diffusion activation energy of N atoms was estimated to be 1.3-1.5 eV, suggesting that the thermal diffusion of N atoms in the [010] direction is dominated by the interstitial mechanism.