[16a-W9_324-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[16a-W9_324-8] Epitaxial Growth of NiO on β-Ga₂O₃ Substrates by Mist CVD Method

〇Masaki Yono¹, Rikuto Ishitani¹, Masao Miyake¹, Takumi Ikenoue¹, Toshiya Doi¹ (1.Kyoto Univ.)

Keywords:

wide-bandgap semiconductor,mist CVD method,epitaxial growth

Monoclinic gallium oxide (β-Ga₂O₃) has attracted attention as a wide bandgap semiconductor. Due to the difficulty in p-type doping, heterostructures with NiO are considered promising. In this study, NiO was epitaxially grown on single-crystal β-Ga₂O₃ substrates by mist CVD at 600°C. Epitaxial growth was confirmed on (100), (010), and (001) substrates. On β-Ga₂O₃ (001), pole figure and reciprocal space mapping revealed the epitaxial relationship: NiO (133)[011] // β-Ga₂O₃ (001)[001]. NiO grew with a 0.6° tilt, attributed to the matching oxygen arrangement between NiO [011] and β-Ga₂O₃ [001].