[16a-WL2_101-1~10] 6.4 Thin films and New materials

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-WL2_101-10] Effects of lattice matching on a metal-insulator transition in Ti,W codoped VO₂ thin film

〇Yuji Muraoka¹, Shoya Inagaki², Takayoshi Yokoya¹ (1.RIIS. Okayama Univ., 2.ELST. Okayama Univ.)

Keywords:

Lattice mismatch,VO2,Metal-insulator transition

By investigating the metal-insulator transition characteristics that appear in (TiVW)O2 films, we demonstrated that high crystalline order can be achieved by controlling the lattice matching in the thin film, thereby deriving excellent properties. A steep transition was observed in electrical resistivity measurements in thin films on TiO2(001) substrates, which have the smallest lattice mismatch among substrates with different lattice mismatches. We will compare the results with thin films with different lattice mismatches and discuss the importance of the control of lattice mismatch for driving excellent physical properties in oxide films.