[16a-WL2_101-1~10] 6.4 Thin films and New materials | The 73rd JSAP Spring Meeting 2026

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Oral presentation6 Thin Films and Surfaces : 6.4 Thin films and New materials

[16a-WL2_101-1~10]6.4 Thin films and New materials

Mon. Mar 16, 2026 9:00 AM - 11:45 AM JST
Mon. Mar 16, 2026 12:00 AM - 2:45 AM UTC

WL2_101 (West Lecture Bldg. 2)

9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[16a-WL2_101-1]Adverse Effects of Ta Addition in Au Deposition and Their Solutions

〇Yudai Inagaki¹, Taichi Ito¹, Takanobu Yamazaki¹, Masatoshi Koyama², Koji Noguchi¹ (1.Matsuda Sangyo Co., Ltd., 2.Osaka Institute of Technology)

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)English Presentation

[16a-WL2_101-2]Substrate and thickness dependent thermoelectric performance of n-type Si-Ge thin films

〇(P)Madhuvathani Saminathan¹, Priyanka Sangwan¹, Ryogo Ishihara¹, Masaharu Matsunami¹, Tsunehiro Takeuchi¹ (1.Toyota Tech. Inst.)

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[16a-WL2_101-3]Development of internal stress and growth of crystal during sputtered W films

〇(B)Takuto Sekine¹, Daisuke Iida¹, Yutaka Nakamitsu², Tetsuji Kiyota², Shigeki Nakagawa¹ (1.Science Tokyo, 2.ULVAC)

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-WL2_101-4]Epitaxial growth of high-quality nitride epitaxial films using sputtering method

〇Takuto Soma¹, Yushi Hiraide², Kodai Niitsu^2,3, Yuki Sasahara⁴, Satoshi Senda⁵, Hitomi Mizutani⁴, Kohei Yoshimatsu², Keisuke Yasuda⁵, Takuya Majima⁴, Hiroshi Kumigashira¹, Akira Ohtomo² (1.Tohoku Univ., 2.Science Tokyo, 3.NIMS, 4.Kyoto Univ., 5.Kyoto Prefectural Univ.)

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[16a-WL2_101-5]Novel complex nitride PrTaN₂ thin film grown by molecular beam epitaxy

〇Kosuke Takiguchi¹, Yoshiharu Krockenberger¹, Yoshitaka Taniyasu¹, Hideki Yamamoto¹ (1.NTT BRL)

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-WL2_101-6]Electrochemical intercalation and etching in Bi₂Se₃ thin-film ion-gated transistors

〇Hisashi Inoue^1,2,3, Shunsuke Nishimura⁴, Junichi Shiogai^5,6, Atsushi Tsukazaki^2,7 (1.AIST, 2.IMR Tohoku Univ., 3.CSIS Tohoku Univ., 4.Dept. Phys. Univ. Tokyo, 5.Dept. Phys. Univ. Osaka, 6.OTRI Spin. Univ. Osaka, 7.QPEC&Dep. Appl. Phys. Univ. Tokyo)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)English Presentation

[16a-WL2_101-7]Tuning Schottky Barrier Characteristics at NiAl/p-Si Interfaces for Scalable Infrared Photodetectors

〇(D)ChihHsing WANG^1,2, Andrea Ruiz-Perona^1,2, Hiroyuki Yamada¹, Thien Duc Ngo¹, Toan Phuoc Tran^1,2, Keisuke Watanabe¹, Tadaaki Nagao^1,2 (1.NIMS, 2.Hokkaido Univ.)

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)English Presentation

[16a-WL2_101-8]Autonomous synthesis workflow for oxide thin films

〇Mikk Lippmaa¹, Hatong Liang², Ichiro Takeuchi² (1.Univ. of Tokyo, 2.Maryland Univ.)

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[16a-WL2_101-9]Epitaxial growth of YBaFe₂O₅F thin films and evaluation of their dielectric properties and electronic structure

〇(M1)Reina Tsuiji¹, Akiko Kamigaito¹, Kei Shigematsu², Hiroshi Kumigashira³, Tsukasa Katayama⁴, Yasushi Hirose⁵, Akira Chikamatsu¹ (1.Ochanomizu Univ., 2.Science Tokyo, 3.Tohoku Univ., 4.Hokkaido Univ., 5.Tokyo Metropolitan Univ.)

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[16a-WL2_101-10]Effects of lattice matching on a metal-insulator transition in Ti,W codoped VO₂ thin film

〇Yuji Muraoka¹, Shoya Inagaki², Takayoshi Yokoya¹ (1.RIIS. Okayama Univ., 2.ELST. Okayama Univ.)

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