Presentation Information
[16a-WL2_101-3]Development of internal stress and growth of crystal during sputtered W films
〇(B)Takuto Sekine1, Daisuke Iida1, Yutaka Nakamitsu2, Tetsuji Kiyota2, Shigeki Nakagawa1 (1.Science Tokyo, 2.ULVAC)
Keywords:
sputtering,W films,internal stress
Film internal stress σ during sputter-deposited thin-film formation changes in a characteristic manner that reflects the growth process. We have performed in situ monitoring of the internal stress during deposition and evaluated its correlation with the film microstructure and crystalline phase. In this report, we systematically investigate factors such as the sputtering method, process gas species, and deposition rate during W film growth, and focus on the conditions under which a clear tendency toward reduced electrical resistivity was observed.
Changing the sputtering gas (Ar → Kr) and increasing the deposition rate promote the growth of the α phase, suggesting that a non-monotonic stress evolution is involved in the underlying mechanism.
Changing the sputtering gas (Ar → Kr) and increasing the deposition rate promote the growth of the α phase, suggesting that a non-monotonic stress evolution is involved in the underlying mechanism.