[16a-WL2_101-1~10] 6.4 Thin films and New materials

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[16a-WL2_101-4] Epitaxial growth of high-quality nitride epitaxial films using sputtering method

〇Takuto Soma¹, Yushi Hiraide², Kodai Niitsu^2,3, Yuki Sasahara⁴, Satoshi Senda⁵, Hitomi Mizutani⁴, Kohei Yoshimatsu², Keisuke Yasuda⁵, Takuya Majima⁴, Hiroshi Kumigashira¹, Akira Ohtomo² (1.Tohoku Univ., 2.Science Tokyo, 3.NIMS, 4.Kyoto Univ., 5.Kyoto Prefectural Univ.)

Keywords:

nitride,sputtering,combinatorial

Metal nitrides are systems in which the synthesis of bulk single crystals is challenging due to the high equilibrium vapor pressure of nitrogen. For elucidating their fundamental physical properties and for device applications, epitaxially grown thin film single crystals are indispensable. The chemical vapor deposition (CVD) method is often used for the growth of GaN-based thin films, which have been commercialized as light-emitting devices and power devices. However, they can also be produced using physical vapor deposition (PVD) methods such as sputtering and molecular beam epitaxy. While PVD methods offer high control over composition, crystal phase, and nanostructure, they also face challenges related to crystallinity, surface flatness, and oxygen impurities. Therefore, in this study, we have newly constructed a sputtering apparatus capable of ultra-high vacuum (~10^-7 Pa) and high temperature (1000 °C) to synthesize high-quality nitride thin films using PVD methods.