[16a-WL2_101-1~10] 6.4 Thin films and New materials

10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[16a-WL2_101-6] Electrochemical intercalation and etching in Bi₂Se₃ thin-film ion-gated transistors

〇Hisashi Inoue^1,2,3, Shunsuke Nishimura⁴, Junichi Shiogai^5,6, Atsushi Tsukazaki^2,7 (1.AIST, 2.IMR Tohoku Univ., 3.CSIS Tohoku Univ., 4.Dept. Phys. Univ. Tokyo, 5.Dept. Phys. Univ. Osaka, 6.OTRI Spin. Univ. Osaka, 7.QPEC&Dep. Appl. Phys. Univ. Tokyo)

Keywords:

ion-gated transistor

Ion-gated transistors provide a useful platform for systematically controlling the electrical and chemical properties of channel materials through electrostatic gating, electrochemical intercalation, and electrochemical etching. In this work, we demonstrate the successful operation of an ion-gated transistor using a Bi₂Se₃ thin film as the channel material, selected for its nontrivial topological band structure and potential for topological superconductivity. We further investigate changes in electrical transport properties induced by electrochemical K intercalation.