[16p-M_178-1~8] New Developments in Microfabrication and MEMS Technologies Pioneering Next-Generation Sensing and Communications

2:40 PM - 3:10 PM JST(5:40 AM - 6:10 AM UTC)

[16p-M_178-4] A Novel Long-Wave IR Image Sensor Based on MEMS Technology

〇Shinji Hara¹, Takahiro Nakagawa¹, Maiko Shirokawa¹, Kohki Kawamura¹, Eiji Komura¹, Susumu Aoki¹, Masao Ichi¹, Tadao Senriuchi¹, Naoki Ohta¹ (1.TDK Corp, Advanced Product Development Center, Tech & IP HQ)

Keywords:

MEMS,long-wave IR image sensor

In this presentation, we introduce a novel structure long wave IR image sensor realized using thin film MEMS process technology. In this device, by forming the pixel (microbolometer) array, traditionally fabricated on the IC side, on the window side wafer, essential circuit elements and getter material for gas molecule adsorption can be stacked vertically. As a result, reductions in chip size and cost are expected. In addition, by employing thin film thermistors as the thermal sensing material, we achieved higher sensitivity and suppression of thermal history effects. These technologies are expected to enable a low cost, high performance long wave IR image sensor.