[16p-PA2-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-PA2-1] Thermal treatment time dependence of precipitates size formed in low-temperature-grown
dilute bismide III-V compound semiconductors

〇(M1C)SHOTARO MORIMOTO¹, KYOSUKE ARIYOSHI¹, YORIKO TOMINAGA¹, KEISUKE MINEHISA², FUMITARO ISHIKAWA² (1.Hiroshima Univ. Adv. Sci. Eng., 2.Hokkaido Univ. RCIQE.)

Keywords:

Dilute bismide III-V compound semiconductors,Low-temperature growth,Molecular beam epitaxy