The 73rd JSAP Spring Meeting 2026
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Session Details

Poster presentation15 Crystal Engineering : 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-PA2-1~6]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Mon. Mar 16, 2026 2:30 PM - 4:00 PM JST
Mon. Mar 16, 2026 5:30 AM - 7:00 AM UTC
PA2 (Arena (1F))

[16p-PA2-1]Thermal treatment time dependence of precipitates size formed in low-temperature-grown
dilute bismide III-V compound semiconductors

〇(M1C)SHOTARO MORIMOTO1, KYOSUKE ARIYOSHI1, YORIKO TOMINAGA1, KEISUKE MINEHISA2, FUMITARO ISHIKAWA2 (1.Hiroshima Univ. Adv. Sci. Eng., 2.Hokkaido Univ. RCIQE.)
English Presentation

[16p-PA2-2]Evidence of spin state-filling from wetting layer in InAs/GaAs quantum dots

〇Ronel Intal Roca1, Rhenish Simon1, Itaru Kamiya1 (1.Toyota Tech. Inst.)
English Presentation

[16p-PA2-3]Comparison of Experiment and Simulation of Size-Dependent Photoluminescence of InAs/GaAs(001) Surface Quantum Dots

〇(D)Dean Von Johari C Narag1, Cyril S Salang1, Ronel Christian Roca2, Itaru Kamiya2 (1.UP Diliman, 2.Toyota Tech. Inst.)

[16p-PA2-4]Calculation of emission energy from single and 2-layer stacked InSb quantum dot

〇Takumi Okawa1, Hiroki Fujishiro1, Akira Endoh1 (1.Tokyo of Science Univ.)

[16p-PA2-5]Fabrication and characterization of flexible near-infrared light-emitting diodes based on thin films incorporating quantum dots

〇Kengo Otsuka1, Tatsuki Yokota1, Yuuki Carl Hodson1, Nobuhiko Ozaki1 (1.Wakayama Univ.)

[16p-PA2-6]Simulation of Regrowth Profiles in InP-based Selective-Area MOVPE

〇Atsushi Era1, Ryoko Suzuki1, Harunaka Yamaguchi1, Yasunori Miyazaki1 (1.Mitsubishi Electric)
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