Presentation Information
[16p-PA2-6]Simulation of Regrowth Profiles in InP-based Selective-Area MOVPE
〇Atsushi Era1, Ryoko Suzuki1, Harunaka Yamaguchi1, Yasunori Miyazaki1 (1.Mitsubishi Electric)
Keywords:
semiconductor,crystal growth,simulation
We constructed a growth profile simulation for InP-based MOVPE selective-area regrowth using insulating masks on stepped substrates. The model convolves the In precursor flux, derived from vapor-phase diffusion calculations, with a gaussian distribution representing the surface migration length with facet-orientation dependence. This approach successfully reproduced both the initial and post-growth profiles on stepped structures. Additionally, the simulated surface protrusion heights showed good agreement with experimental data across various mask widths.