[16p-PA2-1~6] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

[16p-PA2-6] Simulation of Regrowth Profiles in InP-based Selective-Area MOVPE

〇Atsushi Era¹, Ryoko Suzuki¹, Harunaka Yamaguchi¹, Yasunori Miyazaki¹ (1.Mitsubishi Electric)

Keywords:

semiconductor,crystal growth,simulation

We constructed a growth profile simulation for InP-based MOVPE selective-area regrowth using insulating masks on stepped substrates. The model convolves the In precursor flux, derived from vapor-phase diffusion calculations, with a gaussian distribution representing the surface migration length with facet-orientation dependence. This approach successfully reproduced both the initial and post-growth profiles on stepped structures. Additionally, the simulated surface protrusion heights showed good agreement with experimental data across various mask widths.