[16p-PA3-1~11] 15.4 III-V-group nitride crystals

[16p-PA3-10] Electrochemically Energized I–V Characteristics of InAlN and n-GaN

〇Ren Morita¹, Yuma Sakai², Momoko Deura², Tsutomu Araki³, Hiroshi Fujioka⁴, Narihiko Maeda¹ (1.Tokyo Univ. of Technology, 2.Waseda Univ., 3.Ritsumeikan Univ., 4.Inst. of Industrial Science, Univ. of Tokyo)

Keywords:

Electrochemical,Nitride semiconductor