Session Details
[16p-PA3-1~11]15.4 III-V-group nitride crystals
Mon. Mar 16, 2026 2:30 PM - 4:00 PM JST
Mon. Mar 16, 2026 5:30 AM - 7:00 AM UTC
Mon. Mar 16, 2026 5:30 AM - 7:00 AM UTC
PA3 (Arena (1F))
[16p-PA3-1]Crystallographic Tilt and Twist in AlGaN/AlN/Sapphire Heteroepitaxy
〇Koki Fujii1, Yuto Matsubara1, Yusuke Takayanagi1, Yuusuke Takashima1,2, Yoshiki Naoi1,2, Kentaro Nagamatsu1,2,3 (1.G. S. Sci. Tech. Innovation, Tokushima Univ., 2.pLED, Tokushima Univ., 3.IPHF, Tokushima Univ.)
[16p-PA3-2]The Influence of External Factors on Hall Measurement Results in Nitride Semiconductors Fabricated on each Si(001) Substrates
〇Kanata Shibuta1, Shyun Koshiba1, Yuuichirou Kuroda1, Koutarou Izumi1, Hagumi Yamanaka1 (1.Kagawa Univ.)
[16p-PA3-3]Enhancement of light extraction efficiency in AlGaN-based deep-ultraviolet light-emitting diodes by nanostructure reflection
〇Guodong Hao1, Manabu Taniguchi1, Shin-ichiro Inoue1 (1.NICT)
[16p-PA3-4]Analysis of Lattice Parameters of ScAlN Using Machine Learning
〇Atsushi Kobayashi1, Yoshio Honda2, Takuya Maeda3, Thai-Son Nguyen4, Huili Grace Xing4, Debdeep Jena4 (1.Tokyo Univ. of Sci., 2.Nagoya Univ., 3.The Univ. of Tokyo, 4.Cornell Univ)
[16p-PA3-5]Emission Enhancement of InGaN/GaN Quantum Wells Using Metal/Dielectric Thin Films
〇Shun Ito1, Naoki Ueda1, Kai Funato1, Tetsuya Matsuyama1, Shunsuke Murai1, Kenji Wada2, Mitsuru Funato3, Yoichi Kawakami3, Koichi Okamoto1 (1.Osaka Metro. Univ., 2.OMU-ESCARI, 3.Kyoto Univ.)
[16p-PA3-6]Stability of NiO/InGaN/n-GaN Photoanodes during Solar Water Splitting
〇Kazuhide Kumakura1, Yudai Yamashita2, Kazuyuki Hirama2, Yoshitaka Taniyasu2, Taketomo Sato1 (1.RCIQE,Hokkaido Univ., 2.NTT BRL)
[16p-PA3-7]Photoluminescence of Freestanding InGaN film by van der Waals Epitaxy
〇Yuma Tada1, Riku Nambu1, Tsutomu Araki1, Shinichiro Mouri1 (1.Ritsumeikan Univ.)
[16p-PA3-8]Multi-evaluation of AlN nanopillars using X-ray Diffraction Method
〇Taiji Yamamoto1, Weng Zhewei1, Takumu Saito2, Seiya Kato2, Sho Iwayama2, Motoaki Iwaya2 (1.Rigaku Corp., 2.Meijo Univ.)
[16p-PA3-9]Crystal polarity analysis of GaN films using Electron Backscatter Diffraction
〇Ken Matsumura1, Mirei Tokiwa2, Hidehiko Misaki2, Yoshihiro Ueoka2, Masami Mesuda2 (1.Tosoh Analysis and Research Center Co., Ltd., 2.Tosoh Corp.)
[16p-PA3-10]Electrochemically Energized I–V Characteristics of InAlN and n-GaN
〇Ren Morita1, Yuma Sakai2, Momoko Deura2, Tsutomu Araki3, Hiroshi Fujioka4, Narihiko Maeda1 (1.Tokyo Univ. of Technology, 2.Waseda Univ., 3.Ritsumeikan Univ., 4.Inst. of Industrial Science, Univ. of Tokyo)
[16p-PA3-11]Ab initio evaluation of step formation energies on N-polar GaN(0001) surface
〇(M1)Taiki Tahara1, Toru Akiyama2,1, Kawamura Takahiro1,2 (1.Mie Univ., 2.ICSDF Mie Univ.)