[16p-PA3-1~11] 15.4 III-V-group nitride crystals

[16p-PA3-11] Ab initio evaluation of step formation energies on N-polar GaN(0001 ) surface

〇(M1)Taiki Tahara¹, Toru Akiyama^2,1, Kawamura Takahiro^1,2 (1.Mie Univ., 2.ICSDF Mie Univ.)

Keywords:

N-polar GaN,Step formation energy,Epitaxial growth