Presentation Information
[16p-PA3-5]Emission Enhancement of InGaN/GaN Quantum Wells Using Metal/Dielectric Thin Films
〇Shun Ito1, Naoki Ueda1, Kai Funato1, Tetsuya Matsuyama1, Shunsuke Murai1, Kenji Wada2, Mitsuru Funato3, Yoichi Kawakami3, Koichi Okamoto1 (1.Osaka Metro. Univ., 2.OMU-ESCARI, 3.Kyoto Univ.)
Keywords:
InGaN,Surface plasmon,Quantum well
We report emission enhancement of InGaN/GaN quantum wells using Al/Al2O3 thin films. A maximum 14.4-fold enhancement was observed for blue-emitting samples due to surface plasmon resonance and suppressed surface recombination. Significant enhancement was also confirmed for green-emitting samples. We will discuss the enhancement mechanisms, along with the temperature dependence and GaN cap layer thickness dependence.