Presentation Information
[16p-PA3-7]Photoluminescence of Freestanding InGaN film by van der Waals Epitaxy
〇Yuma Tada1, Riku Nambu1, Tsutomu Araki1, Shinichiro Mouri1 (1.Ritsumeikan Univ.)
Keywords:
InGaN,MBE,Photoluminescence
The optical properties of freestanding InGaN thin films grown on graphene by van der Waals epitaxy were investigated for next-generation light-emitting device applications. InGaN films grown by RF-MBE were transferred onto foreign substrates, and photoluminescence spectra were measured from low temperature to room temperature. The results revealed an enhancement of near-band-edge emission at low temperatures, and growth-temperature-dependent changes in defect-related emission were suggested.